| PART |
Description |
Maker |
| LT1810 LT1806 LT1807 |
325MHz, Single/Dual, Rail-to-Rail Input and Output, Low Distortion, Low Noise Precision Op Amps
Dual 325MHz, Rail-to-Rail Input and Output, Low DistortionPrecision Op Amp
|
Linear Technology
|
| AD8622 |
Dual, Low Power, Low Noise, Low Bias Current Precision Rail-to-Rail Output Op Amp
|
Analog Devices
|
| LT6202CS5 LT6202CS8 LT6203CS8 LT6202 LT6204 LT6204 |
Rail-to-Rail Input and Output, Ultralow 1.9n Root Hz Noise, Low Power Op Amps
Single/Dual/Quad 100MHz, Rail-to-Rail Input and Output, Ultralow 1.9nVrtHz Noise, Low Power Op Amps
|
http://
Linear Technology Corporation
LINER[Linear Technology]
|
| ADA4692-2 ADA4692-2ARZ ADA4692-2ARZ-R7 ADA4692-2AR |
Dual, Low Power, Wideband, Low Noise, Rail-to-Rail Output, Operational Amplifiers
|
Analog Devices
|
| KBPC1506F KBPC1506FW KBPC1502F KBPC1502FW KBPC1501 |
Dual Low-Noise Rail-To-Rail Operational Amplifier 8-PDIP 0 to 70 硅桥式整流器
Rail-To-Rail Low Power Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125 硅桥式整流器
Advanced LinCMOS(TM) Rail-To-Rail Quad Operational Amplifier 14-TSSOP -40 to 125
Silicon-Bridge Rectifiers
|
Diotec Semiconductor AG
DIOTEC[Diotec Semiconductor]
Diotec Elektronische
|
| NJU7009RB1 NJU7009V NJU7029 |
Low Noise, Rail-to-Rail Output Dual CMOS Operational Amplifier
|
New Japan Radio
|
| LT1679 LT1678CS8 LT1679CS LT1678IS8 LT1679IS LT167 |
DUAL/QUAD LOW NOISE, RAIL-TO-RAIL, PRECISION OP AMPS
|
LINEAR TECHNOLOGY CORP
LINER[Linear Technology]
|
| LTC6242 LTC6241 LTC6241CS8 LTC6241HVCDD LTC6241HVC |
Dual/Quad 18MHz, Low Noise, Rail-to-Rail, CMOS Op Amps
|
LINER[Linear Technology]
|
| AD8613AKSZ-R2 AD8613AUJZ-R2 AD8617ARZ-REEL AD8617A |
Low Cost Micropower, Low Noise CMOS Rail-to- Rail, Input/Output Operational Amplifiers DUAL OP-AMP, 2200 uV OFFSET-MAX, 0.35 MHz BAND WIDTH, PDSO8
|
Analog Devices, Inc.
|
| LTC6240 LTC6240CS5 LTC6240CS8 LTC6240HS5 LTC6240HS |
Single/Dual/Quad 18MHz, Low Noise, Rail-to-Rail Output, CMOS Op Amps
|
Linear Technology
|
| K4S64323LF-DN15 K4S64323LF-DN15-PB K4S64323LF-DN1H |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 0 to 70 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP 0 to 70 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125 2Mx32移动SDRAM 90FBGA
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Dual Rail-To-Rail Micropower Operational Amplifier 8-SOIC 0 to 70
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| K4S643232C-TC/L80 K4S643232C-TC/L10 K4S643232C-TC/ |
ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70%
Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC 200万32内存12k × 32 × 4银行同步DRAM LVTTL
Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125 200万32内存12k × 32 × 4银行同步DRAM LVTTL
ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70%
Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-PDIP -40 to 85
Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC -40 to 85
Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC
Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
